| Immagine |
Modello di prodotti |
Produttori |
Descrizione |
vista |
 |
MRF9030GNR1 |
NXP USA Inc. |
FET RF TO-270-2 GW |
Inchiesta |
 |
BLF6G20LS-110,118 |
Ampleon USA Inc. |
RF FET LDMOS 65V 19DB SOT502B |
Inchiesta |
 |
BF909R,235 |
NXP USA Inc. |
MOSFET N-CH 7V 40MA SOT143 |
Inchiesta |
|
MRF8S9220HSR3 |
NXP USA Inc. |
FET RF 70V 960MHZ NI780S |
Inchiesta |
 |
MAGX-000035-010000 |
M/A-Com Technology Solutions |
TRANSISTOR GAN 10WCW 0.03-3.5GHZ |
Inchiesta |
 |
PD85006TR-E |
STMicroelectronics |
FET RF 40V 870MHZ POWERSO-10RF |
Inchiesta |
 |
BLF861A,112 |
Ampleon USA Inc. |
RF FET LDMOS 65V 14.5DB SOT540A |
Inchiesta |
 |
BLP05H635XRGY |
Ampleon USA Inc. |
RF FET LDMOS 135V 27DB SOT12242 |
Inchiesta |
 |
MAPG-002729-350L00 |
M/A-Com Technology Solutions |
TRANSISTOR RF 350W GAN |
Inchiesta |
 |
PTAC210802FCV1R250XTMA1 |
Infineon Technologies |
IC AMP RF LDMOS |
Inchiesta |
 |
BLF6G22L-40BN,118 |
Ampleon USA Inc. |
RF FET LDMOS 65V 19DB SOT1112A |
Inchiesta |
|
MRF21030LR3 |
NXP USA Inc. |
FET RF 65V 2.14GHZ NI-400 |
Inchiesta |
 |
BLF647PSJ |
Ampleon USA Inc. |
RF FET LDMOS 65V 17DB SOT1121B |
Inchiesta |
 |
BLF6G20-110,112 |
Ampleon USA Inc. |
RF FET LDMOS 65V 19DB SOT502A |
Inchiesta |
 |
BLM8G0710S-15PBY |
Ampleon USA Inc. |
RF FET LDMOS 65V 36.1DB SOT12112 |
Inchiesta |
 |
BLF178P,112 |
Ampleon USA Inc. |
RF FET LDMOS 110V 28.5DB SOT539A |
Inchiesta |
 |
MRF6V4300NR1 |
NXP USA Inc. |
FET RF 110V 450MHZ TO-270-4 |
Inchiesta |
 |
NE651R479A-T1-A |
CEL |
FET RF 8V 1.9GHZ 79A |
Inchiesta |
 |
MRF6S9125NBR1 |
NXP USA Inc. |
FET RF 68V 880MHZ TO-272-4 |
Inchiesta |
|
BLF188XRU |
Ampleon USA Inc. |
RF FET LDMOS 135V 24.4DB SOT539A |
Inchiesta |
 |
275-501N16A-00 |
IXYS |
RF MOSFET N-CHANNEL DE275 |
Inchiesta |
|
BLF6G22-180PN,112 |
Ampleon USA Inc. |
RF FET LDMOS 65V 17DB SOT539A |
Inchiesta |
 |
ARF440 |
Microsemi Corporation |
PWR MOSFET RF N-CH 150V TO-247AD |
Inchiesta |
 |
ATF-38143-TR1G |
Broadcom Limited |
IC PHEMT 1.9GHZ 4.5V 10MA SOT343 |
Inchiesta |
 |
2N5952_D75Z |
Fairchild/ON Semiconductor |
JFET N-CH 30V 8MA TO92 |
Inchiesta |
 |
MMRF1304LR5 |
NXP USA Inc. |
FET RF 133V 512MHZ NI-360 |
Inchiesta |
 |
BLF642,112 |
Ampleon USA Inc. |
RF FET LDMOS 65V 19DB SOT467C |
Inchiesta |
|
MRF6S9125NR1 |
NXP USA Inc. |
FET RF 68V 880MHZ TO-270-4 |
Inchiesta |
|
BLF7G22L-200,112 |
Ampleon USA Inc. |
RF FET LDMOS 65V 18.5DB SOT502A |
Inchiesta |
 |
PTFA212001F1V4XWSA1 |
Infineon Technologies |
IC RF POWER TRANSISTOR |
Inchiesta |
 |
MPF102G |
ON Semiconductor |
JFET N-CH 25V 20MA TO92 |
Inchiesta |
 |
MRF136 |
M/A-Com Technology Solutions |
FET RF 65V 400MHZ 211-07 |
Inchiesta |
 |
A2I20H060GNR1 |
NXP USA Inc. |
IC TRANS RF LDMOS |
Inchiesta |
|
MRF6S21100HSR5 |
NXP USA Inc. |
FET RF 68V 2.17GHZ NI-780S |
Inchiesta |
 |
2SK4037(TE12L,Q) |
Toshiba Semiconductor and Storage |
MOSFET N-CH PW-X |
Inchiesta |
|
BF908,215 |
NXP USA Inc. |
MOSFET N-CH 12V 40MA SOT143B |
Inchiesta |
 |
VRF148AMP |
Microsemi Corporation |
RF MOSFET N-CHANNEL 50V M113 |
Inchiesta |
|
BLF6G22-180PN,135 |
Ampleon USA Inc. |
RF FET LDMOS 65V 17DB SOT539A |
Inchiesta |
|
AFT09S220-02NR3 |
NXP USA Inc. |
IC TRANS RF LDMOS |
Inchiesta |
|
BLF888EU |
Ampleon USA Inc. |
RF FET LDMOS 104V 17DB SOT539A |
Inchiesta |
|
MRF6S21140HSR3 |
NXP USA Inc. |
FET RF 68V 2.12GHZ NI-880S |
Inchiesta |
|
MRF6S27050HSR5 |
NXP USA Inc. |
FET RF 68V 2.62GHZ NI-780S |
Inchiesta |
 |
BG3123H6327XTSA1 |
Infineon Technologies |
MOSFET N-CH DUAL 8V 25MA SOT363 |
Inchiesta |
 |
ARF465AG |
Microsemi Corporation |
RF PWR MOSFET 1200V 6A TO-247 |
Inchiesta |
|
BF904,215 |
NXP USA Inc. |
MOSFET N-CH 7V 30MA SOT143 |
Inchiesta |
 |
PTFA041501EV4R250XTMA1 |
Infineon Technologies |
FET RF LDMOS 150W H36248-2 |
Inchiesta |
 |
MRF7S18170HR3 |
NXP USA Inc. |
FET RF 65V 1.81GHZ NI-880 |
Inchiesta |
|
PD85035TR-E |
STMicroelectronics |
TRANS RF N-CH FET POWERSO-10RF |
Inchiesta |
|
PXAC243502FVV1XWSA1 |
Infineon Technologies |
IC AMP RF LDMOS |
Inchiesta |
|
375-501N21A-00 |
IXYS |
RF MOSFET N-CHANNEL DE375 |
Inchiesta |
